preliminary solid state devices, inc. sft5553a/e series data sheet #: TR0013A maximum ratings symbol units value v ebo 6.0 volts emitter-base voltage v ceo 80 volts collector-emitter voltage i c 5.0 continuous collector current collector-base voltage v cbo 100 amps volts w w/ o c o c/w 5 amp 100 volts pnp power transistor 30 0.3 thermal resistance, junction to case 4/ r 2 jc 2.6 total device dissipation @ t c # 100 o c 4/ derate above 100 o c 4/ p d i b 2.0 base current amps designer's data sheet note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 pin assignment pin 2 pin 3 base collector pin 1 function code emitter emitter collector base normal reverse - r sft5553a/ e hb tx part number /ordering information 1/ screening 2/ : _ = not screened tx = tx level txv = txv level s = space level lead bend: 3/ _ = not applicable l = straight hb = hoop bend package: 3/ e = milpack i ( .624 x .450 x .150 ) ei = milpack i, isolated features ? bv ceo 100v. ? fast switching. ? very high gain. ? low saturation voltage. ? 200 o c operating, gold eutectic die attach. ? designed for low loss pass regulation. available part numbers: sft5553a/e sft5553a/el sft5553a/ehb sft5553a/eil sft5553a/eihb milpack i o c operating and storage temperature t j, t stg -65 to +200 50 0.5 1.2
solid state devices, inc. preliminary 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 v 80 - bv ceo collector-emitter breakdown voltage (i c = 100 : a dc ) v 100 - collector-base breakdown voltage (i c = 100ua dc ) v 6- bv ebo emitter-base breakdown voltage (i e = 20ua dc ) : a -10 i cbo collector cutoff current (v cb = 100v dc ) na - 100 i ceo collector cutoff current (v ce = 80v dc ) min max electrical characteristics symbol units na emitter cutoff current (v eb = 5v dc ) - i ebo 10 dc current gain* 80 70 60 0.28 collector-emitter saturation voltage* (i c = 3.8a dc, i b = 200ma dc ) v ce(sat) v dc h f e base-emitter saturation voltage* (i c = 3.8a dc, i b = 200ma dc ) 0.92 v dc v be (sat) current gain bandwidth product (i c = 50ma dc , v ce = 10v dc, f = 20mhz) 70 - mhz ft 75 pf output capacitance (v cb = 30v dc , i e = 0a dc, f = 2.0mhz) - c ob (v cc = 20v dc , i c = 1a dc , i b1 = i b2 = 100ma dc r b1 = r b2 = 40 s , r l = 20 s ) turn off time t (on) 200 ns t (off) 500 ns bv cbo turn on time (v ce = 1v dc , i c = 1.0a dc ) (v ce = 1.3v dc , i c = 3.8a dc ) (v ce = 2v dc , i c = 5.0a dc ) - - 160 120 120 - - base-emitter on voltage* (i c = 3.8a dc, v ce = 1.3v dc ) 0.87 v dc v be (on) - notes: * pulse test: pulse width = 300us, duty cycle = 2% 1/ for ordering information, price, and availability contact factory. 2/ screening per mil-prf-19500. 3/ for package outlines contact factory. 4/ hot case | isolated case. sft5553a/e series
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